JPS5252593A - Semiconductor light receiving diode - Google Patents

Semiconductor light receiving diode

Info

Publication number
JPS5252593A
JPS5252593A JP50129630A JP12963075A JPS5252593A JP S5252593 A JPS5252593 A JP S5252593A JP 50129630 A JP50129630 A JP 50129630A JP 12963075 A JP12963075 A JP 12963075A JP S5252593 A JPS5252593 A JP S5252593A
Authority
JP
Japan
Prior art keywords
light receiving
semiconductor light
receiving diode
light
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50129630A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5745067B2 (en]
Inventor
Yoshihiko Mizushima
Kenji Kajiyama
Tatsuya Kimura
Hiroshi Kanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP50129630A priority Critical patent/JPS5252593A/ja
Priority to CA263,362A priority patent/CA1068806A/en
Priority to US05/734,182 priority patent/US4142200A/en
Priority to FR7632260A priority patent/FR2330149A1/fr
Publication of JPS5252593A publication Critical patent/JPS5252593A/ja
Publication of JPS5745067B2 publication Critical patent/JPS5745067B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Light Receiving Elements (AREA)
JP50129630A 1975-10-27 1975-10-27 Semiconductor light receiving diode Granted JPS5252593A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP50129630A JPS5252593A (en) 1975-10-27 1975-10-27 Semiconductor light receiving diode
CA263,362A CA1068806A (en) 1975-10-27 1976-10-14 Semiconductor photodiodes and method of manufacturing the same
US05/734,182 US4142200A (en) 1975-10-27 1976-10-20 Semiconductor photodiodes
FR7632260A FR2330149A1 (fr) 1975-10-27 1976-10-26 Photodiode a semi-conducteur et procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50129630A JPS5252593A (en) 1975-10-27 1975-10-27 Semiconductor light receiving diode

Publications (2)

Publication Number Publication Date
JPS5252593A true JPS5252593A (en) 1977-04-27
JPS5745067B2 JPS5745067B2 (en]) 1982-09-25

Family

ID=15014232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50129630A Granted JPS5252593A (en) 1975-10-27 1975-10-27 Semiconductor light receiving diode

Country Status (4)

Country Link
US (1) US4142200A (en])
JP (1) JPS5252593A (en])
CA (1) CA1068806A (en])
FR (1) FR2330149A1 (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019140132A (ja) * 2018-02-06 2019-08-22 ソニーセミコンダクタソリューションズ株式会社 画素構造、撮像素子、撮像装置、および電子機器

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326211A (en) * 1977-09-01 1982-04-20 U.S. Philips Corporation N+PP-PP-P+ Avalanche photodiode
NL7709618A (nl) * 1977-09-01 1979-03-05 Philips Nv Stralingsgevoelige halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US4219830A (en) * 1978-06-19 1980-08-26 Gibbons James F Semiconductor solar cell
US4441114A (en) * 1981-12-22 1984-04-03 International Business Machines Corporation CMOS Subsurface breakdown zener diode
US4518255A (en) * 1982-08-20 1985-05-21 Mcdonnell Douglas Corporation Temperature tracking range finder
US4616247A (en) * 1983-11-10 1986-10-07 At&T Bell Laboratories P-I-N and avalanche photodiodes
JPS61174051U (en]) * 1985-04-15 1986-10-29
CA1321660C (en) * 1985-11-05 1993-08-24 Hideo Yamagishi Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer
CA1280196C (en) * 1987-07-17 1991-02-12 Paul Perry Webb Avanlanche photodiode
JP2729130B2 (ja) * 1992-04-16 1998-03-18 三菱電機株式会社 半導体装置の製造パラメタの設定方法及びその装置
JPH07240534A (ja) * 1993-03-16 1995-09-12 Seiko Instr Inc 光電変換半導体装置及びその製造方法
US5446308A (en) * 1994-04-04 1995-08-29 General Electric Company Deep-diffused planar avalanche photodiode
US5438217A (en) * 1994-04-29 1995-08-01 General Electric Company Planar avalanche photodiode array with sidewall segment
US6552414B1 (en) * 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
JPH1126741A (ja) 1997-07-04 1999-01-29 Toshiba Corp 固体撮像装置
US6528827B2 (en) 2000-11-10 2003-03-04 Optolynx, Inc. MSM device and method of manufacturing same
CN100474634C (zh) * 2002-02-01 2009-04-01 派克米瑞斯公司 改进的光电探测器
US7323731B2 (en) * 2003-12-12 2008-01-29 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
RU2290721C2 (ru) * 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя
EP2150991B1 (en) * 2007-04-24 2017-09-27 Koninklijke Philips N.V. Method of forming an avalanche photodiode integrated with cmos circuitry and silicon photomultiplier manufactured by said method
JP5493430B2 (ja) 2009-03-31 2014-05-14 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
DE102011003454A1 (de) * 2011-02-01 2012-08-02 Siemens Aktiengesellschaft Strahlungsdirektkonverter, Strahlungsdetektor, medizintechnisches Gerät und Verfahren zum Erzeugen eines Strahlungsdirektkonverters
NL2011568A (en) * 2012-10-31 2014-05-06 Asml Netherlands Bv Sensor and lithographic apparatus.
DE102013018789B4 (de) 2012-11-29 2025-03-06 Infineon Technologies Ag Steuern lichterzeugter Ladungsträger
US11508869B2 (en) * 2019-08-06 2022-11-22 Ohio State Innovation Foundation Lateral interband type II engineered (LITE) detector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS477519A (en]) * 1970-10-05 1972-04-22

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1300164B (de) * 1967-01-26 1969-07-31 Itt Ind Gmbh Deutsche Verfahren zum Herstellen von Zenerdioden
US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
FR2252653B1 (en]) * 1973-11-28 1976-10-01 Thomson Csf
CA1015069A (en) * 1974-04-01 1977-08-02 Chung K. Kim Dynamic negative resistance diode
US3921192A (en) * 1974-05-28 1975-11-18 Gen Electric Avalanche diode
US3990099A (en) * 1974-12-05 1976-11-02 Rca Corporation Planar Trapatt diode
US4060820A (en) * 1976-01-05 1977-11-29 Raytheon Company Low noise read-type diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS477519A (en]) * 1970-10-05 1972-04-22

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019140132A (ja) * 2018-02-06 2019-08-22 ソニーセミコンダクタソリューションズ株式会社 画素構造、撮像素子、撮像装置、および電子機器
JP2023015157A (ja) * 2018-02-06 2023-01-31 ソニーセミコンダクタソリューションズ株式会社 画素構造、撮像素子、撮像装置、および電子機器
US11961869B2 (en) 2018-02-06 2024-04-16 Sony Semiconductor Solutions Corporation Pixel structure, image sensor, image capturing apparatus, and electronic device

Also Published As

Publication number Publication date
FR2330149B1 (en]) 1979-03-02
US4142200A (en) 1979-02-27
FR2330149A1 (fr) 1977-05-27
JPS5745067B2 (en]) 1982-09-25
CA1068806A (en) 1979-12-25

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